Results obtained in this work can be used to predict the radiation resistance of solar cells over a wide range of energies. We selected a total thickness of 100m and a surface of 100 cm2. Optical simulation of the short circuit current with varying AZO EEL from 0-1000 nm. An analytical model has been proposed, which is useful to describe the radiation-induced degradation of diffusion current, recombination current and series resistance. The basic cell since which we began our simulations is a silicon solar cell. Base circuit: Sweep from 0 to 0.562 V, Step at t 0 Collector circuit: Zero. The radiative recombination lifetime, damage constant for minority-carrier lifetime and carrier removal rate models for GaAs sub-cells have been used in the simulations.
BASE CIRCUIT IN PC1D SIMULATOR SOFTWARE
This software was developed in Australia at the university South Wales of Sydney. INTRODUCTION The numerical simulation software PC1D (Personal Computer One Dimensional) is very used in the simulation of solar cells.
BASE CIRCUIT IN PC1D SIMULATOR CODE
Effects of base carrier concentration upon the maximum power point, short-circuit current, open circuit voltage, diffusion current, recombination current and series resistance of these devices have been researched using the displacement damage dose method, the one-dimensional PC1D device modeling program and a home-made numerical code based on genetic algorithms. PC1D, Characteristic I-V, Thickness, Doping 1. Select the second option (Obtain batch parameters from external file) and use the Open button to load the file generated by this webpage. In this paper, a theoretical study of the electrical parameters degradation of different n-type GaAs sub-cells for InGaP/GaAs/Ge triple junction solar cells irradiated with 1 and 5 MeV electrons has been performed by means of computer simulation. Load the appropriate PC1D simulation file and select the menu option Compute - Batch, this will launch the Quick Batch window.